Do IT freelancers increase their entrepreneurial behavior and performance by using IT self-efficacy and social capital? Evidence from Bangladesh

This study applies entrepreneurship theory and social capital perspective to IT freelancing to facilitate a better understanding of it. Our model hypothesizes that both IT self-efficacy and social capital obtained through social media interactions contribute to IT freelancers’ entrepreneurial behavior and then this entrepreneurial behavior influences their performance. We collected primary data from one of the leading online freelancing marketplaces, oDesk.com (currently Upwork.com). Our empirical findings confirm the core assertion of our research model. The implications of these findings for research and practice are discussed. Directions for future research are also provided.     

瞬态闭锁试验在0.13 μm大规模集成电路中引起的潜在损伤

瞬态剂量率辐射试验会引起集成电路发生损伤或失效，其原因至少有两种：闭锁大电流引起的电路内部金属互连熔融；累积电离总剂量引起的氧化层电荷造成阈值电压偏移。本文以一种0.13 μm体硅CMOS处理器为对象，研究了瞬态剂量率和稳态电离总剂量辐射效应规律。结果表明：瞬态剂量率闭锁效应对处理器造成了显著的潜在损伤，导致其总剂量失效阈值从1 030 Gy(Si)降低至600 Gy(Si)。研究结论对于大规模集成电路的可靠性评估和指导辐射加固设计有重要参考意义。     

电磁搅拌对大圆坯结晶器冶金行为影响的探讨

 为了探究结晶器电磁搅拌(M EMS)对大圆坯结晶器内综合冶金行为的影响。以大断面圆坯连铸结晶器冶金行为为研究对象，基于电磁热流体与凝固传输理论建立三维耦合数值模型。揭示大圆坯连铸常用五孔水口浇注条件下结晶器内电磁场、流场、传热与凝固等综合冶金行为，提出电磁搅拌对结晶器冶金性能影响的多参量评价方法。以中碳铬钼齿轮钢650 mm大圆坯连铸为例，指出结晶器电磁搅拌存在最佳搅拌电流，可获得相对较好的综合冶金效果。具体表现为弯月面保持一定的切向速度和过热度，有利于保护渣的熔化和夹杂物的上浮去除；液面波动幅度在控制范围内，可避免卷渣、改善表面质量；结晶器内钢液过热得到有效耗散，有利于等轴晶形核改善铸坯内部质量；侧孔出流钢液速度得到有效控制，可抑制注流对初凝坯壳的冲刷，提高了初生坯壳生长的均匀性。此外，电磁搅拌产生的水平旋流强度也可得到有效控制，有利于避免常见的皮下白亮带现象。     

深圳抽水蓄能电站监控新技术应用研究与实践

通过对安防、工业电视和门禁等新技术的研究,设计了一套先进的监控系统,包括硬件平台、系统管理、应用软件,利用深圳抽水蓄能电站已形成的光纤网络通道把分布在方圆10 km范围内多个站端设备以环路的方式连接起来,把可靠成熟的新技术融合到整个平台。自首台机组成功投运,监控系统为电站正常运行保驾护航,高清摄像机、视觉识别、行为分析、边界防护等新技术的应用为工程项目增添了亮点,使电站现场管理更加智能化、规范化。     

基于人体关节点数据的攻击性行为识别

针对人体攻击性行为识别问题，提出一种基于人体关节点数据的攻击性行为识别方法。首先，利用OpenPose获得单帧图像中的人体关节点数据，并通过最近邻帧特征加权法和分段多项式回归完成由人体自遮挡和环境因素所导致缺失值的补全；然后，对每个人体定义动态"安全距离"阈值，如果两人真实距离小于阈值，则构建行为特征矢量，其中包括帧间人体重心位移、人体关节旋转角角速度和发生交互时的最小攻击距离等；最后，提出改进的LightGBM算法w-LightGBM，并对攻击性行为进行识别。采用公共数据集UT-interaction对所提出的攻击性行为分类识别方法进行测试实验，准确率达到95.45%。实验结果表明，所提方法能够有效识别各种角度的攻击性行为。     

核电厂电气设备陶瓷部件受风生飞射物的冲击破坏

为研究沿海台风中的风生飞射物对核电厂电气设备的冲击破坏，以核电厂户外高压电气设备的陶瓷绝缘材料为研究对象，基于LS-DYNA和HyperMesh，分析陶瓷部件在小球和钢管打击下的破坏情况。结果表明：在受到钢管垂直打击时，陶瓷部件很容易发生破坏；在受到小球冲击时，陶瓷部件局部表面发生破坏。进一步计算得到小球对陶瓷部件的临界破坏冲击速度，可为后续设计和研究提供参考。     

Compressive strength and wear properties of SiC/Al6061 composites reinforced with high contents of SiC fabricated by pressure-assisted infiltration

Pressure-assisted infiltration was used to synthesize SiC/Al 6061 composites containing high weight percentages of SiC. A combination of PEG and glass water was used to fabricate SiC preforms and the effect of the presence of glass water on the microstructure and mechanical properties of the preforms was evaluated by performing compression tests on the preforms. Also, the compressive strength and the hardness of the SiC/Al composites were investigated. The results revealed that the glass water improved the compressive strength of the preforms by about five times. The microstructural characterization of the composites showed that the penetration of the aluminum melt into the preforms was completed and almost no porosity could be seen in the microstructures of the composites. Moreover, the composite containing 75 wt% SiC exhibited the highest compressive strength as well as the maximum hardness. The results of the wear tests showed that increasing the SiC content reduces the wear rate so that the Al-75 wt% SiC composite has a lower wear rate and a lower coefficient of friction than those of Al-67 wt% SiC composite. This indicated higher wear resistance in these composites than the Al alloy due to the formation of a tribological layer on the surface of the composites.     

Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped Flat-Top focus spots

Femtosecond (fs) lasers have been proved to be reliable tools for high-precision and high-quality micromachining of ceramic materials. Nevertheless, fs laser processing using a single-mode beam with a Gaussian intensity distribution is difficult to obtain large-area flat and uniform processed surfaces. In this study, we utilize a customized diffractive optical element (DOE) to redistribute the laser pulse energy from Gaussian to square-shaped Flat-Top profile to realize centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates. We systematically investigated the effects of processing parameters on the changes in surface morphology and composition, and an optimal processing strategy was provided. Mechanisms of the formation of surface nanoparticles and the removal of surface micro-burrs were discussed. We also examined the distribution of subsurface defects caused by fs laser processing by removing a thin surface layer with a certain depth through chemical mechanical polishing (CMP). Our results show that laser-induced periodic surface structures (LIPSSs) covered by fine SiO₂ nanoparticles form on the fs laser-processed areas. Under optimal parameters, the redeposition of SiO₂ nanoparticles can be minimized, and the surface roughness Sa of processed areas reaches 120 ± 8 nm after the removal of a 10 μm thick surface layer. After the laser processing, micro-burrs on original surfaces are effectively removed, and thus the average profile roughness Rz of 2 mm long surface profiles decreases from 920 ± 120 nm to 286 ± 90 nm. No visible micro-pits can be found after removing ~1 μm thick surface layer from the laser-processed substrates.     

Noncentrosymmetric Tetrel Pnictides RuSi4P4 and IrSi3P3: Nonlinear Optical Materials with Outstanding Laser Damage Threshold

Noncentrosymmetric (NCS) tetrel pnictides have recently generated interest as nonlinear optical (NLO) materials due to their second harmonic generation (SHG) activity and large laser damage threshold (LDT). Herein nonmetal-rich silicon phosphides RuSi₄P₄ and IrSi₃P₃ are synthesized and characterized. Their crystal structures are reinvestigated using single crystal X-ray diffraction and ²⁹Si and ³¹P magic angle spinning NMR. In agreement with previous report RuSi₄P₄ crystallizes in NCS space group P1, while IrSi₃P₃ is found to crystallize in NCS space group Cm, in contrast with the previously reported space group C2. A combination of DFT calculations and diffuse reflectance measurements reveals RuSi₄P₄ and IrSi₃P₃ to be wide bandgap (E_g) semiconductors, E_g = 1.9 and 1.8 eV, respectively. RuSi₄P₄ and IrSi₃P₃ outperform the current state-of-the-art infrared SHG material, AgGaS₂, both in SHG activity and laser inducer damage threshold. Due to the combination of high thermal stabilities (up to 1373 K), wide bandgaps (≈2 eV), NCS crystal structures, strong SHG responses, and large LDT values, RuSi₄P₄ and IrSi₃P₃ are promising candidates for longer wavelength NLO materials.